| PART |
Description |
Maker |
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| 10XS3435V10 |
Quad High Side Switch(Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
|
| PSMN4R0-40YS |
N-channel LFPAK 40 V 4.2 MOhm Standard Level MOSFET
|
Philips Semiconductors
|
| 2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB
|
ON Semiconductor
|
| STE180NE10 |
N-CHANNEL 100V - 4.5 MOHM -180A ISOTOP STRIPFET POWER MOSFET
N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET
|
ST Microelectronics
|
| STH130N10F3-2 STFI130N10F3 STF130N10F3 |
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
N-channel 100 V, 7.8 mΩ typ., 120 A STripFET?III Power MOSFET in TO-220FP, I2PAKFP, H2PAK-2 and TO-220 packages
N-channel 100 V, 8 mOhm typ., 46 A STripFET(TM) Power MOSFET in I2PAKFP package
|
STMicroelectronics
ST Microelectronics
|
| NTD5806NT4G |
40V, 18 mOhm, N-Channel, D-Pak, MOSFET 33 A, 40 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| STP110N55F6 |
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STH110N10F7-2 STH110N10F7-6 |
High avalanche ruggedness
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| NVMFD5853NL |
Power MOSFET 40V 34A 10 mOhm Dual N-Channel SO-8FL Logic Level
|
ON Semiconductor
|
|
